Single Crystal Growth Furnace
Single crystal furnace often used for growing semiconductor ingots of Silicon, Sapphire or Germanium. Typical layouts are vertical crystal pullers with front-opening door access.
We can ensure the two most important parameters necessary for critical growth: stability and control. Both are necessary to achieve consistency, repeatability, and uniformity – the keys to successful crystal growth in the laboratory and in production.
1. Stability provides the crystal grower with a known and constant environment for demanding crystal growth. Stability assures uniform, tightly defined temperatures and thermal gradients for consistent melts and zone refining. Stability requires well-controlled gaseous or vacuum environments. Stability in crystal growth demands smooth, highly constant, vibration-free motions with large and dynamic ranges, programmable first and second derivatives and multi-axis configurations – yet all must be controlled.
2. Control is achieved through our automatic computer system interface which holds temperatures precisely where they are set and constant changes quickly and smoothly to new values with minimal overshoot. The motion system must provide pull rates that are highly consistent in both time and space from moment to moment and from week to week. Positional accuracy must be maintained through the complete draw cycle to assure consistent and repeatable results from the crystal growth system.
3. Provides you with a complete, integrated Precision Crystal Growing Equipment with automatic diameter control, leading edge crucible technologies.